深圳市冠亚通电子科技有限公司

General Description Product Summary

VDS

ID (at VGS=10V) 11.5A

RDS(ON) (at VGS=10V) < 12mΩ

RDS(ON) (at VGS=4.5V) < 15.5mΩ

Applications 100% UIS Tested

100% Rg Tested

Symbol

V

• Synchronus Rectification in DC/DC and AC/DC Converters

• Industrial and Motor Drive applications

100

Parameter

Drain-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

Maximum Units

AO4294 SO-8 Tape & Reel 3000

100V N-Channel MOSFET

Orderable Part Number Package Type Form Minimum Order Quantity

• Trench Power MV MOSFET technology 100V

• Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications

Symbol Min Typ Max Units

BVDSS 100 V

VDS=100V, VGS=0V 1

TJ=55°C 5

IGSS ±100 nA

VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V

10 12

TJ=125°C 17.5 21

12.5 15.5 mΩ

gFS 45 S

VSD 0.71 1 V

IS 4 A

Ciss 2420 pF

Coss 170 pF

Crss 11 pF

Rg 0.2 0.55 0.9 Ω

Qg

(10V) 33 50 nC

Qg

(4.5V) 15 25 nC

Qgs 7 nC

Qgd 4 nC

tD(on) 8 ns

tr 3 ns

tD(off) 25 ns

tf 4 ns

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

VDS=VGS, ID=250μA

Output Capacitance

Forward Transconductance

IS=1A,VGS=0V

VDS=5V, ID=11.5A

VGS=10V, ID=11.5A

VDS=0V, VGS=±20V

Maximum Body-Diode Continuous Current

Input Capacitance

Gate-Body leakage current

Turn-Off DelayTime

Turn-Off Fall Time

VGS=10V, VDS=50V, RL=4.35Ω,

RGEN=3Ω

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=4.5V, ID=9.5A

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

Turn-On DelayTime

mΩ

VGS=10V, VDS=50V, ID=11.5A

Total Gate Charge

Electrical Characteristics